Wide Band Gap Semiconductor Nanowires For Optical Devices

Author: Vincent Consonni
Publisher: John Wiley & Sons
ISBN: 1118984285
Size: 14.31 MB
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Wide Band Gap Semiconductor Nanowires For Optical Devices from the Author: Vincent Consonni. This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices

Wide Band Gap Semiconductor Nanowires For Optical Devices

Author: Vincent Consonni
Publisher: John Wiley & Sons
ISBN: 1118984307
Size: 68.82 MB
Format: PDF, ePub, Docs
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Wide Band Gap Semiconductor Nanowires For Optical Devices from the Author: Vincent Consonni. GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.

Nanowires And Nanobelts

Author: Zhong Lin Wang
Publisher: Springer Science & Business Media
ISBN: 9780387287058
Size: 32.61 MB
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Nanowires And Nanobelts from the Author: Zhong Lin Wang.

Wide Bandgap Semiconductor Materials And Devices 12

Author: J. A. Bardwell
Publisher: The Electrochemical Society
ISBN: 1566778670
Size: 32.77 MB
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Wide Bandgap Semiconductor Materials And Devices 12 from the Author: J. A. Bardwell. This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandgap semiconductors: III-nitrides (e. g. gallium nitride), II-oxides, SiC, diamond, II-VI, and also emerging materials such as organic-inorganic nanoscale structures.

Renewable Energies For Central Asia Countries Economic Environmental And Social Impacts

Author: Aldo Iacomelli
Publisher: Springer Science & Business Media
ISBN: 1402039263
Size: 46.38 MB
Format: PDF
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Renewable Energies For Central Asia Countries Economic Environmental And Social Impacts from the Author: Aldo Iacomelli. New technologies will play a crucial role in the development of a market of "sustainable energy products" that should grow in a competitive way to stand against the challenge of change. This book suggests learn from Central Asian countries the potentiality of renewable in such areas as an option. The book investigates policy option for new markets for renewable technology, and it tests the economic path for the Kyoto protocol implementation.

Wide Bandgap Light Emitting Materials And Devices

Author: Gertrude F. Neumark
Publisher: John Wiley & Sons
ISBN: 3527617086
Size: 37.35 MB
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Wide Bandgap Light Emitting Materials And Devices from the Author: Gertrude F. Neumark. Wide bandgap light emitters include laser diodes and light-emitting diodes (LED), the most modern diodes widely used in current technologies as microelectronics and optoelectronics. Rapid advances have been made during the last few years, with the result that more research is devoted to applications in line with the expanding market for optoelectronics. This volume deals with recent research results on wide bandgap light emitting materials, introducing new concepts for devices based on these materials. The editors, scientists with the best reputations, have invited authors from different institutions who are acknowledged researchers in the field as well as being involved in industrial applications. They represent several lines of research: III-nitride compounds, ZnO and ZnSe, the most promising materials for device applications.

Wide Bandgap Semiconductors

Author: Kiyoshi Takahashi
Publisher: Springer Science & Business Media
ISBN: 3540472355
Size: 11.51 MB
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Wide Bandgap Semiconductors from the Author: Kiyoshi Takahashi. This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

Novel Compound Semiconductor Nanowires

Author: Fumitaro Ishikawa
Publisher: CRC Press
ISBN: 1315340720
Size: 38.90 MB
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Novel Compound Semiconductor Nanowires from the Author: Fumitaro Ishikawa. One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

One Dimensional Nanostructures

Author: Zhiming M Wang
Publisher: Springer Science & Business Media
ISBN: 0387741321
Size: 24.83 MB
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One Dimensional Nanostructures from the Author: Zhiming M Wang. One-dimensional (1D) nanostructures, including nanowires, nanotubes and quantum wires, have been regarded as the most promising building blocks for nanoscale electronic and optoelectronic devices. This book presents exciting, state-of-the-art developments in synthesis and properties of 1D nanostructures with many kinds of morphologies and compositions as well as their considerable impact on spintronics, information storage, and the design of field-effect transistors.

Inorganic Nanowires

Author: M. Meyyappan
Publisher: CRC Press
ISBN: 1420067834
Size: 60.60 MB
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Inorganic Nanowires from the Author: M. Meyyappan. Advances in nanofabrication, characterization tools, and the drive to commercialize nanotechnology products have contributed to the significant increase in research on inorganic nanowires (INWs). Yet few if any books provide the necessary comprehensive and coherent account of this important evolution. Presenting essential information on both popular and emerging varieties, Inorganic Nanowires: Applications, Properties, and Characterization addresses the growth, characterization, and properties of nanowires. Author Meyyappan is the director and senior scientist at Ames Center for Nanotechnology and a renowned leader in nanoscience and technology, and Sunkara is also a major contributor to nanowire literature. Their cutting-edge work is the basis for much of the current understanding in the area of nanowires, and this book offers an in-depth overview of various types of nanowires, including semiconducting, metallic, and oxide varieties. It also includes extensive coverage of applications that use INWs and those with great potential in electronics, optoelectronics, field emission, thermoelectric devices, and sensors. This invaluable reference: Traces the evolution of nanotechnology and classifies nanomaterials Describes nanowires and their potential applications to illustrate connectivity and continuity Discusses growth techniques, at both laboratory and commercial scales Evaluates the most important aspects of classical thermodynamics associated with the nucleation and growth of nanowires Details the development of silicon, germanium, gallium arsenide, and other materials in the form of nanowires used in electronics applications Explores the physical, electronic and other properties of nanowires The explosion of nanotechnology research activities for various applications is due in large part to the advances in the growth of nanowires. Continued development of novel nanostructured materials is essential to the success of so many economic sectors, ranging from computing and communications to transportation and medicine. This volume discusses how and why nanowires are ideal candidates to replace bulk and thin film materials. It covers the principles behind device operation and then adds a detailed assessment of nanowire fabrication, performance results, and future prospects and challenges, making this book a valuable resource for scientists and engineers in just about any field. Co-author Meyya Meyyappan will receive the Pioneer Award in Nanotechnology from the IEEE Nanotechnology Council at the IEEE Nano Conference in Portland, Oregon in August, 2011