Advanced Surfaces For Stem Cell Research

Author: Ashutosh Tiwari
Publisher: John Wiley & Sons
ISBN: 1119242827
Size: 24.68 MB
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Advanced Surfaces For Stem Cell Research from the Author: Ashutosh Tiwari. The book outlines first the importance of Extra Cellular Matrix (ECM), which is a natural surface for most of cells. In the following chapters the influence of biological, chemical, mechanical, and physical properties of surfaces in micro and nano-scale on stem cell behavior are discussed including the mechanotransduction. Biomimetic and bioinspired approaches are highlighted for developing microenvironment of several tissues, and surface engineering applications are discussed in tissue engineering, regenerative medicine and different type of biomaterials in various chapters of the book. This book brings together innovative methodologies and strategies adopted in the research and development of Advanced Surfaces in Stem Cell Research. Well-known worldwide researchers deliberate subjects including: Extracellular matrix proteins for stem cell fate The superficial mechanical and physical properties of matrix microenvironment as stem cell fate regulator Effects of mechanotransduction on stem cell behavior Modulation of stem cells behavior through bioactive surfaces Influence of controlled micro and nanoengineered surfaces on stem cell fate Nanostructured polymeric surfaces for stem cells Laser surface modification techniques and stem cells applications Plasma polymer deposition: a versatile tool for stem cell research Application of bioreactor concept and modeling techniques in bone regeneration and augmentation treatments Substrates and surfaces for control of pluripotent stem cell fate and function Application of biopolymer-based, surface modified devices in transplant medicine and tissue engineering Silk as a natural biopolymer for tissue engineering

Doping Engineering For Device Fabrication

Author: Bartek J. Pawlak
Publisher: Cambridge Univ Pr
ISBN: 9781558998681
Size: 41.89 MB
Format: PDF, Docs
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Doping Engineering For Device Fabrication from the Author: Bartek J. Pawlak. This volume from the 2006 MRS Spring Meeting focuses on fundamental materials science and device research for current transistor technologies. Materials scientists come together with silicon technologists and TCAD researchers and activation technologies for integrated circuits, to discuss current achievements research directions.

Chalcogenide Alloys For Reconfigurable Electronics

Author: P. Craig Taylor
Publisher: Materials Research Society
ISBN:
Size: 54.22 MB
Format: PDF, Mobi
View: 261
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Chalcogenide Alloys For Reconfigurable Electronics from the Author: P. Craig Taylor. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Materials In Extreme Environments

Author: Daryush Ila
Publisher: Cambridge University Press
ISBN:
Size: 15.65 MB
Format: PDF, ePub, Mobi
View: 6592
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Materials In Extreme Environments from the Author: Daryush Ila. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Transistor Scaling Methods Materials And Modeling

Author: Scott Thompson
Publisher:
ISBN:
Size: 23.60 MB
Format: PDF, ePub
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Transistor Scaling Methods Materials And Modeling from the Author: Scott Thompson. or the past four decades, geometric scaling of silicon CMOS transistors has enabled not only an exponential increase in circuit integration density┼╝Moore's Law┼╝but also a corresponding enhancement in the transistor performance. Simple MOSFET geometric scaling has driven the industry to date. However, as the transistor gate lengths drop below 35nm and the gate oxide thickness is reduced to 1nm, physical limitations such as off-state leakage current and power density make geometric scaling an increasingly challenging task. In order to continue CMOS device scaling, innovations in device structures and materials are required and the industry needs a new scaling vector. Starting at the 90 and 65nm technology generation, strained silicon has emerged as one such innovation. Other device structures such as multigate FETs may be introduced to meet the scaling challenge. This volume brings together materials scientists, silicon technologists and TCAD researchers to share experimental results and physical models related to state-of-the-art MOSFETs, and to discuss the new and innovative approaches necessary to continue the transistor scaling. Expanded versions of presentations in the areas of technology development, metrology, characterization and modeling are featured.